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Micron Introduces Higher-Performance High-Capacity, High-Bandwidth Memory to Fuel Generative AI Innovation

Micron Introduces Higher-Performance High-Capacity, High-Bandwidth Memory to Fuel Generative AI Innovation

 

 

【Lansheng Technology Information】Micron Technology Inc. announced today that the company has begun to sample the industry's first 8-layer stacked 24GB second-generation HBM3 memory with a bandwidth exceeding 1.2TB/s and a pin rate exceeding 9.2Gb/s. Compared with the existing HBM3 solution currently on the market, the performance can be improved by up to 50%. Compared with the previous generation, Micron's second-generation HBM3 products have 2.5 times the performance per watt, setting a new record for key artificial intelligence (AI) data center performance, capacity and energy efficiency indicators, and will help the industry shorten large-scale language models (such as GPT-4 and later), provide an efficient infrastructure for AI inference, and reduce the total cost of ownership.

 

Based on the industry-leading 1β DRAM process node, Micron launched a high-bandwidth memory (HBM) solution that packages 24Gb DRAM die into an industry-standard size 8-layer stacked module. In addition, Micron's 12-layer stacked 36GB capacity products will also start sampling in the first quarter of 2024. Compared to other 8-layer stacking solutions currently on the market, Micron's HBM3 solution has a 50% increase in capacity. The performance-per-watt and pin-speed improvements of Micron's second-generation HBM3 products are critical to managing the extreme power demands of today's AI data centers. Micron has achieved significant improvements in energy efficiency through technological innovations, such as doubling the number of through-silicon vias (TSVs), increasing metal density by 5 times to reduce thermal resistance, and designing more energy-efficient data paths compared to other HBM3 solutions in the industry .

 

Micron, a long-time memory leader in 2.5D/3D stacking and advanced packaging technologies, is honored to be a partner member of TSMC's 3DFabric Alliance, building the future of semiconductor and system innovation. During the development of the second-generation HBM3 product, Micron and TSMC worked together to lay the foundation for the smooth introduction and integration of computing systems in AI and high-performance computing (HPC) design applications. TSMC has received Micron's second-generation HBM3 memory samples and is working closely with Micron for further evaluation and testing to help customers innovate next-generation high-performance computing applications.

 

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